tpcp8504 TOSHIBA Semiconductor CORPORATION, tpcp8504 Datasheet - Page 3

• Manufacturer Part Number: tpcp8504
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.001
0.01
2.4
2.0
1.6
1.2
0.8
0.4
0.1
2.0
1.6
1.2
0.8
0.4
0.001
0
1
0
0
0
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Common emitter
β = 50
Single nonrepetitive pulse
30
Collector−emitter voltage V
40
60
Base−emitter voltage V
0.2
Ta = 100°C
Collector current I
0.01
0.4
20
0.4
Ta = 100°C
−55°C
V
CE (sat)
I
I
C
C
– V
– V
0.6
0.1
0.8
CE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
BE
– I
25
C
25°C
0.8
C
BE
CE
(A)
1.2
1
I B = 2 mA
(V)
1.0
10
(V)
−55
6
4
8
1.2
1.6
10
3
10000
1000
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
0.1
10
0.001
10
0.001
0
0
1
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Common emitter
β = 50
Single nonrepetitive pulse
20
Ambient temperature Ta (°C)
Ta = 100°C
Collector current I
40
Collector current I
0.01
0.01
25°C
−55
25
60
Ta = −55°C
V
BE (sat)
P
h
FE
c
80
– Ta
0.1
0.1
DC operation
Mounted on an FR4 board
glass epoxy, 1.6 mm thick,
Cu area: 645 mm
– I
C
– I
100
100°C
C
C
C
120
(A)
(A)
1
1
Ta = 25 °C
2
)
140
TPCP8504
2006-11-13
160
10
10