tpcp8203 TOSHIBA Semiconductor CORPORATION, tpcp8203 Datasheet - Page 2

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tpcp8203

Manufacturer Part Number
tpcp8203
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Thermal Characteristics
Thermal resistance,
channel to ambient
(t = 5 s)
Thermal resistance,
channel to ambient
(t = 5 s)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
Note 4: V
Note 5: Repetitive rating: Pulse width limited by Max. Channel temperature.
Note 6: ● on the lower left of the marking indicates Pin 1.
Note 7: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
* Weekly code (3 digits):
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
b) The power dissipation and thermal resistance values shown are for a single device.
(Note 2a) Single-device value at
(Note 2b) Single-device value at
DD
Characteristic
(During single-device operation, power is applied to one device only.)
(During dual operation, power is applied to both devices evenly.).
= 25 V, T
Single-device operation
dual operation (Note 3b)
Single-device operation
dual operation (Note 3b)
ch
25.4
(a)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
= 25°C (initial), L = 0.5 mH, R
Year of manufacture
(The last digit of the calendar year)
(Note 3a)
(Note 3a)
25.4 × 25.4 × 0.8
R
R
R
R
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Symbol
FR-4
(Unit: mm)
G
2
= 25 Ω, I
101.6
215.5
347.2
Max
84.5
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
AR
Unit
= 4.7 A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8203
2007-02-28

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