tpcp8203 TOSHIBA Semiconductor CORPORATION, tpcp8203 Datasheet - Page 5

• Manufacturer Part Number: tpcp8203
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
100
2.0
1.5
1.0
0.5
80
60
40
20
10
0
0
−80
0.1
0
Common source
Tc = 25°C
Single Pulse test
Common source
Ta = 25°C
V GS = 0 V
f = 1 MHz
(1)
(2)
(3)
(4)
V GS = 4.5 V
−40
Drain−source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (
40
0
Device mounted on a glass-epoxy board (a)
(1) Single-device operation
(2) Single-device value at dual operation
Device mounted on a glass-epoxy board (b)
(3) Single-device operation
(4) Single-device value at dual operation
t = 5 s
1
V GS = 10 V
R
I D = 4.7, 2.4, 1.2A
80
DS (ON)
C – V
P
D
40
– Ta
DS
– Ta
120
I D = 4.7, 2.4, 1.2A
80
10
DS
160
°
C)
(V)
120
C iss
C rss
C oss
(Note 2a)
(Note 3a)
(Note 3b)
(Note 2b)
(Note 3a)
(Note 3b)
200
160
100
5
100
0.1
10
40
30
20
10
1
4
3
2
1
0
−80
0
0
0
Common source
Ta = 25°C
Single Pulse test
V DS
− 0.2
Drain−source voltage V
−40
10
Ambient temperature Ta (
Total gate charge Q
4
5
Dynamic input/output
− 0.4
0
characteristics
3
I
8
DR
V
th
− 0.6
1
– V
40
– Ta
DS
V GS
16V
12
− 0.8
80
g
V GS = 0, −1 V
DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
I D = 4.7 A
Ta = 25°C
Pulse test
8V
(nC)
V DD = 32V
16
°
(V)
C)
120
− 1
TPCP8203
2007-02-28
− 1.2
160
20
16
14
12
10
8
6
4
2
0