tpc8030 TOSHIBA Semiconductor CORPORATION, tpc8030 Datasheet - Page 3

• Manufacturer Part Number: tpc8030
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= 10 mA, V
= 10 mA, V
GS
3
= 11 A, V
(Ta = 25°C)
= ± 25 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
≈
≤
10 V
0 V
24 V, V
1%, t
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
GS
= 10 μ s
= 1 mA
= 5.5 A
DS
= 5.5 A
= 5.5 A
⎯
= 0 V
= 0 V
= − 25 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
I
D
V
DD
= 5.5 A
≈
D
15 V
V
= 11 A
OUT
Min
Min
1.3
30
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
1140
Typ.
11.5
Typ.
255
390
7.5
8.4
26
14
25
33
24
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
4
2008-04-02
TPC8030
± 100
− 1.2
Max
Max
2.5
10
17
44
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
Unit
Unit
m Ω
nC
n A
μ A
pF
ns
V
V
S
A
V