tpc8030 TOSHIBA Semiconductor CORPORATION, tpc8030 Datasheet - Page 4

• Manufacturer Part Number: tpc8030
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
50
40
30
20
10
10
8
6
4
2
0
0
1
0.1
0
0
10
Common source
V DS = 10 V
Pulse test
5 4
Drain − source voltage V
Gate − source voltage V
1
0.2
Ta = −55°C
Drain current I
8
3.6
2
6
1
100
0.4
3.7
I
I
|Y
100
D
D
fs
– V
– V
25
| – I
3
3.5
DS
GS
D
0.6
Ta = −55°C
D
25
10
4
GS
(A)
DS
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 3.0 V
0.8
(V)
(V)
5
3.4
3.3
3.2
3.1
100
1
6
4
100
0.5
0.4
0.3
0.2
0.1
20
16
12
10
8
4
0
0
1
0.1
0
0
10
Common source
Ta = 25°C
Pulse test
5
Drain-source voltage V
Gate − source voltage V
0.4
2
8
4
6
Drain current I
2.8
1
R
0.8
V
DS (ON)
4
I
DS
D
– V
– V
3.7
V GS = 10 V
5.5
DS
4.5
GS
– I
1.2
6
D
Common source
Ta = 25°C Pulse test
I D = 11 A
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS =3.0 V
1.6
8
(V)
(V)
2008-04-02
3.2
3.6
3.4
3.3
3.1
TPC8030
3.5
100
10
2