tpc8a04-h TOSHIBA Semiconductor CORPORATION, tpc8a04-h Datasheet - Page 5

• Manufacturer Part Number: tpc8a04-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
2.0
1.5
1.0
0.5
10
8
6
4
2
0
−80
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = 4.5 V
(1)
(2)
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
V GS = 10 V
40
Capacitance − V
1
0
R
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
DS (ON)
P
board (a) (Note 2a)
board (b) (Note 2b)
I D = 4.5, 9, 18 A
t = 10 s
D
40
80
– Ta
− Ta
80
10
DS
I D = 4.5, 9, 18 A
DS
120
(V)
120
C rss
C oss
C iss
160
100
160
5
100
2.0
1.5
1.0
0.5
10
40
30
20
10
0
−80
1
0
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
10
−40
Drain-source voltage V
V DS
Ambient temperature Ta (°C)
10
−0.2
Total gate charge Q
3
Dynamic input/output
20
0
4.5
characteristics
−0.4
I
DR
V
th
− V
1
40
30
− Ta
V DD = 6 V
DS
−0.6
80
40
g
24V
DS
Common source
I D = 18 A
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
(nC)
V GS = 0 V
−0.8
TPC8A04-H
(V)
120
12V
50
2008-10-01
−1.0
160
60
16
12
8
4
0