tpc8a04-h TOSHIBA Semiconductor CORPORATION, tpc8a04-h Datasheet - Page 6

• Manufacturer Part Number: tpc8a04-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
0.1
10
1
0.1
*Single-pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse) *
Drain-source voltage V
Safe operating area
1000
0.01
1
100
0.1
0.0001
10
10 ms *
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
0.001
V DSS max
10
t =1 ms *
DS
(V)
0.01
100
Pulse width t
0.1
r
6
th
– t
w
w
1
(s)
10
100
Single Pulse
(2)
(1)
1000
TPC8A04-H
2008-10-01