hat2114r Renesas Electronics Corporation., hat2114r Datasheet - Page 6

• Manufacturer Part Number: hat2114r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2114R, HAT2114RJ
Rev.1.00, Oct.06.2003, page 6 of 9
1000
200
500
100
100
50
20
10
80
60
40
20
0.1
0
V
I
D
V
DD
Reverse Drain Current
DS
0.3
= 6 A
Dynamic Input Characteristics
= 50 V
Body-Drain Diode Reverse
8
Gate Charge
25 V
10 V
Recovery Time
1
16
di / dt = 100 A / s
V
V
GS
3
DD
= 0, Ta = 25°C
= 50V
24
Qg (nc)
25V
10V
10
V
GS
I
DR
32
30
(A)
100
40
20
16
12
8
4
0
1000
5000
2000
1000
500
200
100
300
100
50
20
10
30
10
3
1
0.1
0
V
f = 1 MHz
Drain Source Voltage V
GS
0.3
10
Switching Characteristics
= 0
Typical Capacitance vs.
Drain Current
Drain Source Voltage
1
V
PW = 5 s, duty < 1 %
20
GS
= 10 V, V
3
30
I
10
D
DD
(A)
DS
40
t d(on)
t f
= 30 V
t r
t d(off)
30
(V)
Coss
Crss
Ciss
100
50