hat2114r Renesas Electronics Corporation., hat2114r Datasheet - Page 7

• Manufacturer Part Number: hat2114r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2114R, HAT2114RJ
Rev.1.00, Oct.06.2003, page 7 of 9
Vin
15 V
20
16
12
8
4
0
Switching Time Test Circuit
10 V
Vin
10 V
Source Drain Voltage
Vin Monitor
Rg
Reverse Drain Current vs.
0.4
Avalanche Test Circuit
Source to Drain Voltage
5 V
V
Monitor
50
DS
Rg
0.8
D.U.T.
V
GS
1.2
= 0, -5 V
D. U. T
Pulse Test
I
Monitor
V
AP
R
SD
L
V
= 30V
1.6
L
DS
Vout
Monitor
(V)
2.0
V
DD
0
V
td(on)
DD
Vout
Vin
4.0
3.2
2.4
1.6
0.8
E
0
25
AR
Switching Time Waveform
I
=
10%
AP
Maximum Avalanche Energy vs.
Channel Temperature Tch ( C)
Channel Temperature Derating
10%
1
2
50
90%
I
tr
Avalanche Waveform
D
• L • I
75
AP
td(off)
2
•
90%
100
V
DSS
I
V
L = 100 H
duty < 0.1 %
Rg > 50
AP
V
DD
90%
DSS
V
= 6 A
125
– V
DS
= 25 V
10%
V
t
DD
f
(BR)DSS
150