hat2038r Renesas Electronics Corporation., hat2038r Datasheet - Page 2

• Manufacturer Part Number: hat2038r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2038R, HAT2038RJ
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
Electrical Characteristics
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
current
Zero gate voltage drain
current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
Rev.5.00 Sep 07, 2005 page 2 of 7
2. 1 Drive operation: When using the glass epoxy board (FR4 40
3. 2 Drive operation: When using the glass epoxy board (FR4 40
4. Value at Tch = 25 C, Rg
5. Pulse test
10 s, duty cycle
Item
Item
HAT2038R
HAT2038RJ
HAT2038R
HAT2038RJ
HAT2038R
HAT2038RJ
HAT2038R
HAT2038RJ
1%
50
V
V
Symbol
R
R
V
Coss
(BR) DSS
(BR) GSS
Crss
Ciss
t
t
I
GS (off)
I
I
I
I
DS (on)
DS (on)
|y
V
d (on)
d (off)
GSS
DSS
DSS
DSS
DSS
t
t
t
DF
rr
fs
r
f
|
I
D (pulse)
Pch
Pch
E
Symbol
I
AP
AR
V
V
Tstg
Min
Tch
1.2
60
I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
DSS
GSS
DR
20
6
Note 4
D
Note 4
Note 2
Note 3
Note 1
0.043
0.056
0.84
Typ
520
270
100
110
11
40
80
40
—
—
—
—
—
—
—
—
9
0.058
0.084
Max
40
40
0.1
2.2
1.1
10
—
—
—
—
—
—
—
—
—
—
—
—
10
1
–55 to +150
1.6 mm), PW
1.6 mm), PW
Value
2.14
150
Unit
60
40
—
—
20
5
5
5
2
3
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
S
V
A
A
A
A
A
I
I
V
V
V
Ta = 125 C
V
I
I
I
V
V
f = 1 MHz
V
V
I
I
di
D
G
D
D
D
F
F
GS
DS
DS
DS
DS
GS
GS
DD
F
= 5 A, V
= 5 A, V
= 10 mA, V
= 3 A, V
= 3 A, V
= 3 A, V
= 100 A, V
/dt = 50 A/ s
= 60 V, V
= 48 V, V
= 10 V, I
= 10 V
= 16 V, V
= 0
= 10 V, I
10 s
10 s
Test Conditions
30 V
GS
GS
GS
GS
DS
D
D
= 0
= 0
= 10 V
= 10 V
= 4 V
GS
GS
GS
= 1 mA
= 3 A,
DS
DS
Unit
= 0
= 0
= 0
mJ
(Ta = 25 C)
(Ta = 25 C)
Note 5
—
—
W
W
V
V
A
A
A
A
= 0
C
C
= 0
Note 5
Note 5
Note 5