hat2038r Renesas Electronics Corporation., hat2038r Datasheet - Page 4

• Manufacturer Part Number: hat2038r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2038R, HAT2038RJ
Rev.5.00 Sep 07, 2005 page 4 of 7
0.20
0.16
0.12
0.08
0.04
500
200
100
100
Static Drain to Source on State Resistance
50
20
10
80
60
40
20
0
–40
5
0
0.1
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
V
Dynamic Input Characteristics
= 5 A
DS
0.2
Body-Drain Diode Reverse
V
Gate Charge
GS
10 V
0
8
= 4 V
vs. Temperature
Recovery Time
0.5
40
16
V
DD
di / dt = 50 A / µs
V
V
I
1
D
GS
GS
= 50 V
= 5 A
80
25 V
10 V
24
1, 2, 5 A
= 0, Ta = 25°C
V
Qg (nc)
DD
2
Tc
= 10 V
DR
120
25 V
50 V
32
1, 2 A
(°C)
5
(A)
160
40
10
20
16
12
8
4
0
2000
1000
1000
500
100
300
100
200
0.5
50
20
10
50
20
10
30
10
5
2
1
3
1
0.1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
Forward Transfer Admittance vs.
V
Pulse Test
GS
DS
0.2
0.2
Switching Characteristics
= 0
= 10 V
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
t f
0.5
0.5
Drain Current
20
V
PW = 5 µs, duty ≤ 1 %
Tc = –25°C
GS
Ciss
Coss
Crss
75°C
1
1
t d(off)
= 10 V, V
t r
30
2
I
2
D
D
25°C
(A)
t d(on)
DD
(A)
40
DS
= 30 V
5
5
(V)
10
10
50