m28f410 STMicroelectronics, m28f410 Datasheet - Page 10

• Manufacturer Part Number: m28f410
• Description: 4 Megabit X8 Or X16, Block Erase Flash Memory
• Manufacturer: STMicroelectronics

Table 13. Read AC Characteristics
(T
Notes: 1. See Figure 3 and Table 8 for timing measurements.
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Symbol
t
t
t
t
t
t
t
t
t
GHQX
A
GLQX
GLQV
EHQX
EHQZ
GHQZ
AXQX
ELQX
ELQV
t
t
t
AVQV
PHQV
AVAV
= 0 to 70°C or –40 to 85°C; V
2. Sampled only, not 100% tested.
3. G may be delayed by up to t
(2)
(3)
(2)
(3)
(2)
(2)
(2)
(2)
(2)
t
t
t
Alt
t
PWH
t
t
t
t
ACC
t
t
OLZ
t
t
RC
OE
OH
OH
OH
CE
HZ
DF
LZ
Address Valid to
Next Address Valid
Address Valid to
Output Valid
Power Down High
to Output Valid
Chip Enable Low to
Output Transition
Chip Enable Low to
Output Valid
Output Enable Low
to Output Transition
Output Enable Low
to Output Valid
Chip Enable High
to Output Transition
Chip Enable High
to Output Hi-Z
Output Enable High
to Output Transition
Output Enable High
to Output Hi-Z
Address Transition
to Output Transition
Parameter
ELQV
- t
PP
GLQV
= 12V ± 5%)
V
after the falling edge of E without increasing t
Min
(1)
CC
70
0
0
0
0
0
Interface
SRAM
= 5V ± 5%
-70
Max
300
70
70
35
25
25
V
CC
Min
80
0
0
0
0
0
Interface
EPROM
= 5V ± 10% V
-80
M28F410 / 20
Max
300
80
80
40
30
30
CC
Min
100
0
0
0
0
0
Interface
ELQV
EPROM
= 5V ± 10% V
-100
.
Max
100
300
100
45
35
35
CC
Min
120
0
0
0
0
0
Interface
EPROM
= 5V ± 10%
-120
Max
120
300
120
50
35
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns