m28f410 STMicroelectronics, m28f410 Datasheet - Page 22

• Manufacturer Part Number: m28f410
• Description: 4 Megabit X8 Or X16, Block Erase Flash Memory
• Manufacturer: STMicroelectronics

Table 20A. Write AC Characteristics, Chip Enable Controlled
(T
Notes: 1. See Figure 3 and Table 8 for timing measurements.
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t
t
t
EHQV1
EHQV2
t
t
t
t
t
PHBR
Symbol
A
PHHEH
t
VPHEH
EHQV3
EHQV4
QVVPL
QVPH
t
t
t
t
t
t
t
t
t
t
EHWH
WLEL
DVEH
EHDX
EHAX
= –40 to 125°C; V
AVAV
PHEL
ELEH
EHEL
AVEH
2. Time is measured to Status Register Read giving bit b7 = ’1’.
3. For Program or Erase of the Boot Block RP must be at V
4. Time required for Relocking the Boot Block.
5. Sampled only, not 100% tested.
(4, 5)
(2, 3)
(2, 3)
(5)
(5)
(5)
(2)
(2)
(5)
t
t
t
t
Alt
t
t
WPH
t
t
t
t
t
t
PHS
t
PHH
VPS
WC
WP
PS
CS
DS
DH
CH
AS
AH
Write Cycle Time
Power Down High to Chip Enable Low
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Data Valid to Chip Enable High
Chip Enable High to Data Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip
Enable Low
Address Valid to Chip Enable High
Power Down VHH (Boot Block Unlock) to Chip
Enable High
V
Chip Enable High to Address Transition
Chip Enable High to Output Valid (Word/Byte
Program)
Chip Enable High to Output Valid (Boot Block
Erase)
Chip Enable High to Output Valid (Parameter
Block Erase)
Chip Enable High to Output Valid (Main Block
Erase)
Output Valid to Reset/Power Down High
Output Valid to V
Reset/Power Down High to Boot Block Relock
PP
PP
High to Chip Enable High
= 12V ± 5%)
PP
Parameter
Low
HH
.
V
Min
210
100
100
(1)
0.3
0.3
0.6
80
50
50
10
30
50
10
CC
0
0
6
0
0
Interface
SRAM
= 5V ± 5%
-80
Max
M28F410 / 20
100
V
Min
210
100
100
CC
0.4
0.4
0.7
90
60
60
10
40
60
10
0
0
7
0
0
Interface
EPROM
= 5V ± 10%
-90
Max
100
Unit
sec
sec
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns