mf1s503x NXP Semiconductors, mf1s503x Datasheet - Page 23
mf1s503x
Manufacturer Part Number
mf1s503x
Description
Mf1s503x Mifare Classic 1k - Mainstream Contactless Smart Card Ic For Fast And Easy Solution Development
Manufacturer
NXP Semiconductors
Datasheet
1.MF1S503X.pdf
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NXP Semiconductors
13. Wafer specification
MF1S503x
Product data sheet
PUBLIC
For more details on the wafer delivery forms see
Table 24.
[1]
Table 25.
Wafer
diameter
maximum diameter after foil expansion
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
Chip dimensions
step size
gap between chips
Passivation
type
material
thickness
Wafer
diameter
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
Chip dimensions
step size
scribe line
the gap between chips may vary due to changing foil expansion
Wafer specifications MF1S5035DUx/L
Wafer specifications MF1S5037DUx
All information provided in this document is subject to legal disclaimers.
[1]
Rev. 3.1 — 21 February 2011
MIFARE Classic 1K - Mainstream contactless smart card IC
194031
Ref.
500 nm / 600 nm
x = 86,4 μm
200 mm typical (8 inches)
210 mm
120 μm ± 15 μm
not applicable
27720
Si
ground and stress relieve
R
R
x = 1062 μm
y = 1012 μm
typical = 27 μm
minimum = 5 μm
sandwich structure
PSG / nitride
200 mm typical (8 inches)
120 μm ± 15 μm
not applicable
25060
Si
ground and stress relieve
R
R
x = 1100 μm
y = 1030 μm
y = 66,4 μm
6.
a
t
a
t
max = 5 μm
max = 5 μm
max = 0.5 μm
max = 0.5 μm
MF1S503x
© NXP B.V. 2011. All rights reserved.
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