STT3585_12 SECOS [SeCoS Halbleitertechnologie GmbH], STT3585_12 Datasheet

STT3585_12

Manufacturer Part Number

STT3585_12

Description

3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET

Manufacturer

SECOS [SeCoS Halbleitertechnologie GmbH]

Datasheet

1.STT3585_12.pdf (7 pages)

Current page: 1 of 7
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http://www.SeCoSGmbH.com/

03-Jan-2012 Rev. C

DESCRIPTION

FEATURES

MARKING CODE

PACKAGE INFORMATION

ABSOLUTE MAXIMUM RATINGS

of fast switching, low on-resistance and cost effectiveness.

commercial-industrial surface mount applications.



Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Maximum Junction to Ambient

Linear Derating Factor

Operating Junction & Storage Temperature Range

3 5 8 5





The STT3585 provide the designer with best combination

The TSOP-6 package is universally used for all

Low Gate Charge

Low On-resistance

Package

TSOP-6

Elektronische Bauelemente



= Date Code

Parameter

MPQ

= 25°C

= 70°C

A suffix of “-C” specifies halogen & lead-free

Leader Size

= 25°C unless otherwise specified)

7 inch

RoHS Compliant Product

Symbol

, T

θJA

STG

N And P-Channel Enhancement Mode Power MOSFET

N-Channel

±12

3.5

2.8

Ratings

-55~150

-2.5A, -20V, R

3.5A, 20V, R

1.14

0.01

110

D G

P-Channel

REF.

STT3585

Any changes of specification will not be informed individually.

-1.97

-2.5

±12

-20

-10

Min.

2.70

2.60

1.40

0.30

Millimeter

1.10 MAX.

1.90 REF.

DS(ON)

TSOP-6

Max.

3.10

3.00

1.80

0.50

TOP VIEW

75m

160m

REF.

Min.

°C / W

W / °C

0°

Millimeter

0.60 REF.

0.12 REF.

0.95 REF.

Unit

°C

Max.

0.10

10°

Page 1 of 7

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