STT3585_12 SECOS [SeCoS Halbleitertechnologie GmbH], STT3585_12 Datasheet - Page 2

• Manufacturer Part Number: STT3585_12
• Description: 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
• Manufacturer: SECOS [SeCoS Halbleitertechnologie GmbH]

http://www.SeCoSGmbH.com/
03-Jan-2012 Rev. C
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown
Voltage
Breakdown Voltage Temp.
Coefficient
Gate-Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current
Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Elektronische Bauelemente
Parameter
1
1
1
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
N-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
P-Ch
△BV
Symbol
(T
R
BV
V
T
T
J
I
C
I
DS(ON)
C
Q
Q
C
GS(th)
DSS
g
GSS
DSS
Q
R
d(on)
d(off)
T
T
= 25°C unless otherwise specified)
oss
rss
DSS
iss
fs
gs
gd
r
g
g
f
/△T
J
Min.
-20
0.5
20
Static
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N And P-Channel Enhancement Mode Power MOSFET
-0.01
Typ.
0.02
430
630
0.7
1.4
17
10
16
55
50
40
40
7
4
4
5
1
2
2
6
6
8
5
7
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
±100
±
-1.2
160
125
300
520
750
1.2
-25
1.7
100
10
75
10
-1
1
7
8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-2.5A, -20V, R
3.5A, 20V, R
Unit
V/°C
mΩ
μA
nC
nS
STT3585
nA
pF
V
V
S
Ω
Any changes of specification will not be informed individually.
V
V
Reference to 25°C, ID=1mA
Reference to 25°C, ID= -1mA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
N-Channel
V
P-Channel
V
N-Channel
V
V
P-Channel
V
V
N-Channel
V
P-Channel
V
f=1.0MHz
GS
GS
DS
DS
DS
DS
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
GS
DS(ON)
DS(ON)
=V
=V
=5V, I
= -5V, I
=20 V, V
= -20 V, V
=16V, V
= -16V, V
=16V, V
= -16V, V
=15V, R
= -10V, R
=0, I
=0, I
= ±12V
= ±12V
=4.5V, I
= -4.5V, I
=2.5V, I
= -2.5V, I
=5V, I
= -10V, I
=0, V
=0, V
GS
GS
Test Conditions
D
D
75m
160m
, I
, I
DS
DS
=250μA
= -250μA
D
D
=3A
D
D
=1A
D
=20V, f=1.0MHz
= -20V, f=1.0MHz
D
D
GS
GS
=250μA
= -250μA
G
= -2A
D
GS
=3.5A
=1.2A
D
D
=3.3Ω,R
GS
GS
G
= -1A
GS
=0
=4.5V, I
= -2.5A
= -2A
=3.3Ω,R
=0
=0
= -4.5V, I
=0
D
D
=15Ω
=3A
Page 2 of 7
D
=10Ω
D
= -2A