qm100tx1-h Mitsumi Electronics, Corp., qm100tx1-h Datasheet - Page 3

• Manufacturer Part Number: qm100tx1-h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

PERFORMANCE CURVES
10
200
160
120
10
10
80
40
–1
0
COLLECTOR-EMITTER VOLTAGE V
7
5
3
2
7
5
3
2
5
4
3
2
1
0
1
0
10
1.0
0
COLLECTOR-EMITTER SATURATION
–1
V
T
BASE-EMITTER VOLTAGE V
j
CE
=25°C
CHARACTERISTICS (TYPICAL)
COMMON EMITTER OUTPUT
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
=2V
2
1.4
1
BASE CURRENT I
VOLTAGE (TYPICAL)
3
5
1.8
2
7
10
0
2.2
3
2
I
B
C
=70A
3
(A)
T
T
2.6
I
j
j
C
4
=25°C
=125°C
BE
=100A
5
(V)
CE
7
(V)
3.0
10
5
I
5A
4A
3A
2A
1A
0.6A
0.4A
0.2A
B
1
=
10
10
10
10
10
10
10
10
10
–1
–1
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
2
7
5
3
2
7
5
3
2
3
2
1
1
0
1
0
2 3
2 3
2 3
SWITCHING TIME VS. COLLECTOR
COLLECTOR CURRENT (TYPICAL)
I
MITSUBISHI TRANSISTOR MODULES
B
=3.0A
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
t
t
t
on
V
V
s
f
DC CURRENT GAIN VS.
5 7
SATURATION VOLTAGE
T
T
BE(sat)
CE(sat)
5 7
5 7
j
j
T
T
CURRENT (TYPICAL)
=25°C
=125°C
j
j
=25°C
=125°C
HIGH POWER SWITCHING USE
10
10
10
1
1
1
2 3
2 3
2 3
QM100TX1-H
V
I
5 7
B1
CC
V
=I
5 7
5 7
CE
=300V
B2
T
T
=5.0V
10
C
C
C
INSULATED TYPE
j
j
=3.0A
=25°C
=125°C
10
10
2
(A)
(A)
(A)
2
2
2 3
2
2
Feb.1999