qm100tx1-h Mitsumi Electronics, Corp., qm100tx1-h Datasheet - Page 4

• Manufacturer Part Number: qm100tx1-h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
FORWARD BIAS SAFE OPERATING AREA
–1
10
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
0
10
1
0
10
3
2
1
0
10
TRANSIENT THERMAL IMPEDANCE
–1
0
BASE REVERSE CURRENT –I
T
NON–REPETITIVE
–3
CHARACTERISTIC (TRANSISTOR)
0
C
2
2
2
=25°C
SWITCHING TIME VS. BASE
2
3
3
3
T
T
4
4
j
j
=25°C
=125°C
CURRENT (TYPICAL)
3
5
5
5
7
7
7
10ms
10
10
10
5 7
DC
1
–2
1
TIME (s)
2
2
2
10
3
3
3
4
0
V
I
I
5
5
B1
C
CC
=100A
7
7
=3.0A
10
=300V
2 3
10
100µs
1ms
–1
2
2
2
3
3
B2
t
5 7
4
f
t
s
(A)
5
CE
5
50µs
7
7
10
(V)
10
10
1
3
0
200
180
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
REVERSE BIAS SAFE OPERATING AREA
0
0
7
5
4
3
2
7
5
4
3
2
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
100
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
COLLECTOR
DISSIPATION
0.4
200
40
HIGH POWER SWITCHING USE
300
60
0.8
–V
CEO
400
80
(V)
1.2
500
100 120
QM100TX1-H
SECOND
BREAKDOWN
AREA
I
600
B2
T
T
C
=–3A
j
j
1.6
=25°C
=125°C
INSULATED TYPE
( C)
700
140
CE
800
160
(V)
2.0
Feb.1999