qm30tf-hb ETC-unknow, qm30tf-hb Datasheet

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... UL Recognized Yellow Card No. E80276 (N) 17.5 Fig. 1 2– 5.5 BwP EwP 8 6.35 1.65 W BwN EwN P BuP EuP U BuN EuN N Note: All Transistor Units are 3-Stage Darlingtons. QM30TF-HB INSULATED TYPE File No. E80271 Dimensions in mm Fig. 2 3.8 2.8 1.2 BvP BwP EvP EwP V W BvN BwN EvN EwN Feb.1999 ...

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... CE V =300V, I =30A, I =60mA, I =–0. Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 250 1.8 300 –40~+150 –40~+125 2500 1 ...

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... T =125° =30A C I =20A C 10 – (A) B MITSUBISHI TRANSISTOR MODULES QM30TF-HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =25° =125° =5. =2.5V CE ...

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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE QM30TF-HB INSULATED TYPE I =–0. =–3.0A B2 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125° ...

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... – FORWARD CURRENT QM30TF-HB INSULATED TYPE =300V CC I =60mA B1 I =–0. =25° =125°C j – ...