qm30tf-hb ETC-unknow, qm30tf-hb Datasheet - Page 3

• Manufacturer Part Number: qm30tf-hb
• Description: Mitsubishi Transistor Modules
• Manufacturer: ETC-unknow

PERFORMANCE CURVES
10
10
100
10
80
60
40
20
–1
–2
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0
10
2.2
0
COLLECTOR-EMITTER SATURATION
–3
T
V
T
BASE-EMITTER VOLTAGE V
j
j
CE
=25°C
=25°C
2
CHARACTERISTICS (TYPICAL)
COMMON EMITTER OUTPUT
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
=2.5V
3
2.6
1
4
BASE CURRENT I
5
VOLTAGE (TYPICAL)
I
C
=10A
7
10
3.0
–2
2
2
3
4
5
3.4
3
7
10
B
I
–1
C
(A)
=20A
T
T
I
2
3.8
C
j
j
=25°C
=125°C
4
=30A
BE
3
4
(V)
5
CE
7
(V)
4.2
5
10
0
10
10
10
10
10
10
10
10
10
10
–1
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
1
0
10
10
4
3
2
1
10
SWITCHING TIME VS. COLLECTOR
0
0
I
COLLECTOR CURRENT (TYPICAL)
0
MITSUBISHI TRANSISTOR MODULES
B
t
on
=40mA
2
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
t
s
MEDIUM POWER SWITCHING USE
3
2 3 4 5 7
2 3 4 5 7
T
T
DC CURRENT GAIN VS.
SATURATION VOLTAGE
4
j
j
V
=25°C
=125°C
CURRENT (TYPICAL)
5
CE
7
V
=2.5V
10
BE(sat)
1
2
t
f
V
10
10
3
CE(sat)
4
1
1
5
7
V
2 3 4 5 7
2 3 4 5 7
10
CE
QM30TF-HB
I
I
V
B1
B2
2
CC
=5.0V
T
=60mA
=–0.6A
T
T
T
2
=300V
j
j
j
j
C
C
=125°C
C
INSULATED TYPE
=25°C
=25°C
=125°C
3
(A)
(A)
(A)
4
5
7
10
10
10
2
2
3
Feb.1999