IRLR/U2705 IRF [International Rectifier], IRLR/U2705 Datasheet - Page 2

• Manufacturer Part Number: IRLR/U2705
• Description: HEXFET POWER MOSFET
• Manufacturer: IRF [International Rectifier]

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Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
Notes:
L
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
L
C
C
C
I
I
V
t
Q
t
DSS
SM
rr
GSS
d(on)
r
d(off)
f
S
on
D
S
fs
(BR)DSS
DS(on)
GS(th)
SD
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
iss
oss
rss
rr
Repetitive rating; pulse width limited by
V
R
g
gs
gd
I
T
2
(BR)DSS
SD
J
DD
G
≤ 175°C
= 25Ω, I
≤ 16A, di/dt ≤ 270A/µs, V
= 25V, starting T
/∆T
J
AS
Internal Drain Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Internal Source Inductance
= 16A. (See Figure 12)
J
= 25°C, L = 610µH
Parameter
Parameter
DD
≤ V
(BR)DSS
,
J
= 25°C (unless otherwise specified)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
1.0
–––
–––
55
11
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
…
†
‡
Caculated continuous current based on maximum allowable
Uses IRLZ34N data and test conditions.
This is applied for I-PAK, L
junction temperature;
0.065 –––
lead and center of die contact.
–––
–––
–––
––– 0.040
––– 0.051
––– 0.065
–––
–––
–––
–––
–––
880
220
–––
190
–––
–––
–––
–––
100
7.5
8.9
4.5
21
29
94
76
-100
–––
28
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
110
290
2.0
5.2
1.3
25
25
14
110
V/°C
nC
nC
nH
µA
nA
pF
ns
ns
W
V
V
V
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „‡
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact†
V
V
ƒ = 1.0MHz, See Fig. 5‡
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 16A
= 16A
= 25°C, I
Package limitation current = 20A.
= 25°C, I
= 1.8Ω, See Fig. 10 „‡
= 6.5Ω, V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= V
= 25V, I
= 55V, V
= 44V, V
= 16V
= -16V
= 44V
= 5.0V, See Fig. 6 and 13 „‡
= 28V
= 0V
= 25V
S
of D-PAK is measured between
GS
, I
D
F
S
D
D
D
= 250µA
D
D
GS
Conditions
Conditions
GS
GS
= 16A
= 17A, V
= 250µA
= 16A‡
= 17A „
= 17A „
= 14A „
= 5.0V
= 0V, T
= 0V
D
www.irf.com
= 1mA
GS
J
= 150°C
= 0V „
G
G
S
+L
D
D
S
)
S
D