IRHNA57260SE IRF [International Rectifier], IRHNA57260SE Datasheet - Page 2

• Manufacturer Part Number: IRHNA57260SE
• Description: RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
• Manufacturer: IRF [International Rectifier]

Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Thermal Resistance
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
IRHNA57260SE, JANSR2N7473U2
BV DSS
∆BV DSS /∆T J Temperature Coefficient of Breakdown
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
t f
L S + L D
C iss
C oss
C rss
R thJC
R thJ-PCB
I S
I SM
V SD
t rr
Q RR Reverse Recovery Charge
t on
(on)
(off)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Forward Turn-On Time
Parameter
Junction-to-Case
Junction-to-PC board
Parameter
Drain-to-Source Breakdown Voltage
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
@ Tj = 25°C (Unless Otherwise Specified)
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
200
2.5
—
—
35
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
—
—
—
—
—
—
6044
0.26
Typ Max Units
913
0.5
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
65
—
53.5
214
450
1.2
7.0
0.038
-100
°C/W
100
155
125
4.5
10
25
45
75
35
80
50
—
—
—
—
—
—
—
µC
nS
V
A
V/°C
S ( )
nH
µA
nA
nC
ns
pF
soldered to a 2” square copper-clad board
Ω
V
V
Ω
T j = 25°C, I F = 53.5A, di/dt ≤ 100A/µs
T
j
drain pad to center of source pad
= 25°C, I S = 53.5A, V GS = 0V Ã
Measured from the center of
Reference to 25°C, I D = 1.0mA
Test Conditions
Test Conditions
V GS = 0V, I D = 1.0mA
V DD = 100V, I D = 53.5A,
V GS =12V, I D = 53.5A
V GS = 0V, V DS = 25V
V DS = 160V ,V GS =0V
V GS =12V, R G = 2.35Ω
V GS = 12V, I D = 34A
V DS > 15V, I DS = 34A Ã
V GS = 0V, T J = 125°C
V DS = V GS , I D = 1.0mA
Test Conditions
V DD ≤ 50V Ã
V DS = 160V,
V DS = 100V
V GS = -20V
V GS = 20V
f = 1.0MHz
Pre-Irradiation
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