IRHNA57260SE IRF [International Rectifier], IRHNA57260SE Datasheet - Page 8

• Manufacturer Part Number: IRHNA57260SE
• Description: RADIATION HARDENED POWER MOSFET THRU-HOLE (SMD-2)
• Manufacturer: IRF [International Rectifier]

IRHNA57260SE, JANSR2N7473U2
Footnotes:
À
Á
Â
Case Outline and Dimensions — SMD-2
8
maximum junction temperature.
Peak I L = 53.5A, V GS = 12V
V DD ≤ 200V, T J ≤ 150°C
V DD = 50V, starting T J = 25°C, L= 0.27mH
Repetitive Rating; Pulse width limited by
I SD ≤ 53.5A, di/dt ≤ 190A/µs,
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: [phone]
Data and specifications subject to change without notice. 04/2006
Visit us at www.irf.com for sales contact information.
Ã
Ä
Å
Total Dose Irradiation with V DS Bias.
12 volt V GS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
160 volt V DS applied and V GS = 0 during
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with V GS Bias.
irradiation per MlL-STD-750, method 1019, condition A.
TAC Fax: [phone]
Pre-Irradiation
www.irf.com