glt4160l04se-70tc G-Link Technology Corporation, glt4160l04se-70tc Datasheet - Page 3

• Manufacturer Part Number: glt4160l04se-70tc
• Description: 4m X 4 Cmos Dynamic Ram With Extended Data Output
• Manufacturer: G-Link Technology Corporation

Absolute Maximum Ratings*
Operating Temperature, T
*Note: Operation above Absolute Maximum Ratings can
Electrical Specifications
Block Diagram :
For Extended Temperature……………..-20 C to 85 C
Storage Temperature(plastic)............-55 C to +150 C
Voltage Relative to V
Short Circuit Output Current...............................20mA
Power Dissipation...............................................1.0W
l
l
All voltages are referenced to GND.
After power up, wait more than 200 s and then, execute eight
refresh cycles as dummy cycles to initialize internal circuit.
aversely affect device reliability.
G-LINK
.............................................….0 C to +70 C
CAS
RAS
WE
A
A
A
A
A
A
A
A
A
A
A
10
0
1
2
3
4
5
6
7
8
9
SS
11
11
........................-0.5V to + 4.6V
A
(ambient)
CONTROLLER
GENERATOR
GENERATOR
BUFFERS(11)
NO.1 CLOCK
NO.2 CLOCK
BUFFER(11)
ADDRESS
REFRESH
COUNTER
COLUMN-
REFRESH
ADDRESS
ROW
Web : www.glink.com.tw
G-Link Technology Corporation,Taiwan
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
11
TEL : [phone]
11
- 3 -
Email : [e-mail]
Capacitance*
T
Symbol
A
*Note: Capacitance is sampled and not 100% tested
2048
=25 C, V
C
C
C
OUT
IN1
IN2
SENSE AMPLIFIERS
2048
Address Input
RAS, CAS, WE, OE
Data Input/Output
2048 x 1024 x 4
DATA-OUT
DECODER
COLUMN
DATA-IN
BUFFER
BUFFER
CC
I/O GATING
MEMORY
2048
ARRAY
=3.3V 0.3V, V
Parameter
CAS
-before-
4
4
SS
4
4
=0V
RAS
GLT4160L04
or
SEPT 2004 (Rev.4.3)
V
V
DQ
DQ
DQ
DQ
OE
Max.
DD
SS
RAS
5
7
7
0
1
2
3
-only
Unit
pF
pF
pF