ap2305gn APEC, ap2305gn Datasheet - Page 4

• Manufacturer Part Number: ap2305gn
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: APEC

AP2305GN
0.01
100
0.1
12
10
10
8
6
4
2
0
1
0.1
0
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
V
I
V
90%
10%
DS
V
D
Single Pulse
DS
= -4A
GS
T
= -16V
A
5
-V
=25
DS
Q
t
o
d(on)
G
, Drain-to-Source Voltage (V)
C
, Total Gate Charge (nC)
10
1
t
r
15
20
10
t
d(off)
100us
1ms
10ms
100ms
1s
DC
t
f
25
100
30
Fig 10. Effective Transient Thermal Impedance
10000
1000
0.01
100
0.1
10
0.0001
1
Fig 8. Typical Capacitance Characteristics
1
-4.5V
Fig 12. Gate Charge Waveform
DUTY=0.5
0.05
0.02
0.1
0.01
0.2
V
G
Single Pulse
0.001
5
Q
-V
GS
DS
0.01
t , Pulse Width (s)
, Drain-to-Source Voltage (V)
9
Q
Q
0.1
Charge
G
GD
13
1
65mΩ
P
Duty factor = t/T
Peak T
Rthja = 270℃/W
DM
17
10
j
= P
t
DM
T
x R
thja
f=1.0MHz
21
100
+ T
Coss
Crss
Ciss
a
Q
1000
25
4