DS24B33+ MAXIM [Maxim Integrated Products], DS24B33+ Datasheet
DS24B33+
Related parts for DS24B33+
DS24B33+ Summary of contents
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... Low-Cost Through-Hole and SMD Packages ♦ Operating Range: +2.8V to +5.25V, -40°C to +85°C ♦ IEC 1000-4-2 Level 4 ESD Protection (±8kV Contact, ±15kV Air, Typical) for IO Pin PART IO DS24B33+ DS24B33 DS24B33+T&R DS24B33S+ DS24B33S+T&R GND + Denotes a lead(Pb)-free/RoHS-compliant package. T&R = Tape and reel. Features Ordering Information ...
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EEPROM with 200k Write/Erase Cycles ABSOLUTE MAXIMUM RATINGS IO Voltage Range to GND ........................................-0.5V to +6V IO Sink Current....................................................................20mA Operating Temperature Range ...........................-40°C to +85°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-55°C to +125°C Stresses beyond those listed ...
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ELECTRICAL CHARACTERISTICS (continued -40°C to +85°C.) (Note 1) A PARAMETER SYMBOL IO PIN: 1-Wire WRITE Write-Zero Low Time (Notes 2, 16) Write-One Low Time (Notes 2, 16) IO PIN: 1-Wire READ Read Low Time (Notes 2, 17) Read ...
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EEPROM with 200k Write/Erase Cycles ELECTRICAL CHARACTERISTICS (continued -40°C to +85°C.) (Note 1) A Note 20: Write-cycle endurance is degraded as T Note 21: Not 100% production tested; guaranteed by reliability monitor sampling. Note 22: Data ...
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TO-92 SO NAME 1 4 GND 5–8 N.C. Detailed Description The DS24B33 combines 4Kb of data EEPROM with a fully featured 1-Wire interface in a single chip. The memory is organized as 16 pages ...
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EEPROM with 200k Write/Erase Cycles registration number, 32-byte scratchpad, sixteen 32-byte pages of EEPROM, and a CRC-16 generator. Figure 2 shows the hierarchical structure of the 1-Wire protocol. The bus master must first provide one of the seven ...
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The shift register bits are initialized to 0. Then, starting with the LSB of the family code, one bit at a time is shifted in. After the 8th bit of the family code has been entered, the serial number is ...
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EEPROM with 200k Write/Erase Cycles Memory Access Address Registers and Transfer Status The DS24B33 employs three address registers: TA1, TA2, and E/S (Figure 6). Registers TA1 and TA2 must be loaded with the target address to which the ...
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Memory Function Commands The Memory Function Flowchart (Figure 7) describes the protocols necessary for accessing the memory of the DS24B33. The target address registers TA1 and TA2 are used for both read and write. The communica- tion between the master ...
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EEPROM with 200k Write/Erase Cycles BUS MASTER Tx MEMORY FUNCTION COMMAND 0Fh WRITE SCRATCHPAD? Y DS24B33 CLEARS PF, AA BUS MASTER Tx EEPROM ARRAY TARGET ADDRESS TA1 (T[7:0]), TA2 (T[15:8]) DS24B33 SETS SCRATCHPAD OFFSET = (T[4:0]) MASTER Tx ...
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FROM FIGURE 7a 55h N COPY SCRATCHPAD? Y BUS MASTER Rx TA1 (T[7:0]), TA2 (T[15:8]), AND E/S BYTE Y AUTHORIZATION CODE MATCH? N BUS MASTER Rx "1"s N MASTER Tx RESET FIGURE 7a *1-Wire IDLE HIGH FOR t ...
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EEPROM with 200k Write/Erase Cycles Read Memory [F0h] The Read Memory command is the general function to read from the DS24B33. After issuing the command, the master must provide a 2-byte target address, which should be in the ...
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A multidrop bus consists of a 1-Wire bus with multiple slaves attached. The DS24B33 supports both a stan- dard and overdrive communication speed of 15.4kbps (maximum) and 125kbps (maximum), respectively, over the full pullup voltage range. For pullup voltages of ...
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EEPROM with 200k Write/Erase Cycles This command can save time in a single-drop bus sys- tem by allowing the bus master to access the memory functions without providing the 64-bit ROM code. If more than one slave is ...
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FROM MEMORY FUNCTIONS FLOWCHART (FIGURE 7) BUS MASTER Tx ROM FUNCTION COMMAND 33h READ ROM COMMAND DS24B33Tx FAMILY CODE (1 BYTE) DS24B33 Tx SERIAL NUMBER (6 BYTES) DS24B33 Tx CRC BYTE Figure 9a. ROM Functions Flowchart ...
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EEPROM with 200k Write/Erase Cycles TO FIGURE 9a FROM FIGURE 9a FROM FIGURE 9a TO FIGURE 9a NOTE: THE OD FLAG REMAINS THE DEVICE WAS ALREADY AT OVERDRIVE SPEED BEFORE THE OVERDRIVE-MATCH ROM COMMAND WAS ...
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Signaling The DS24B33 requires strict protocols to ensure data integrity. The protocol consists of four types of signaling on one line: reset sequence with reset pulse and pres- ence pulse, write-zero, write-one, and read-data. Except for the presence pulse, ...
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EEPROM with 200k Write/Erase Cycles voltage on the data line should not exceed V ing the entire window. After the V W0L W1L WRITE-ONE TIME SLOT t W1L V PUP V IHMASTER ...
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A read-data time slot begins like a write-one time slot. The voltage on the data line must remain below V until the read low time t is expired. During the t RL dow, when responding with a 0, the DS24B33 ...
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EEPROM with 200k Write/Erase Cycles 1ST 2ND STAGE STAGE 9TH 10TH 11TH STAGE STAGE STAGE Figure 13. CRC-16 Hardware Description and Polynomial Command-Specific 1-Wire Communication Protocol—Legend SYMBOL RST ...
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Command-Specific 1-Wire Communication Protocol—Color Codes Write Scratchpad, Reaching the End of the Scratchpad RST PD Select WS TA <data to EOS> Read Scratchpad RST PD Select RS TA-E/S <data to EOS> Copy Scratchpad (Success) RST PD Select CPS TA-E/S Copy ...
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EEPROM with 200k Write/Erase Cycles REVISION REVISION NUMBER DATE 0 2/11 Initial release Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim ...