PSMN9R0-25YLC_1111 PHILIPS [NXP Semiconductors], PSMN9R0-25YLC_1111 Datasheet - Page 9

• Manufacturer Part Number: PSMN9R0-25YLC_1111
• Description: N-channel 25 V 9.1 m? logic level MOSFET in LFPAK using NextPower technology
• Manufacturer: PHILIPS [NXP Semiconductors]

NXP Semiconductors
PSMN9R0-25YLC
Product data sheet
Fig 12. Drain-source on-state resistance as a function
Fig 14. Gate charge waveform definitions
R
(mΩ)
DSon
50
40
30
20
10
0
of drain current; typical values
0
V
V
V
V
GS(pl)
DS
GS(th)
GS
2.8
Q
GS1
20
I
Q
D
GS
N-channel 25 V 9.1 mΩ logic level MOSFET in LFPAK using NextPower technology
Q
GS2
Q
G(tot)
V
GS
Q
(V) = 3.0
GD
40
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003aag205
I
D
003aaa508
(A)
3.5
4.5
10
Rev. 2 — 1 November 2011
60
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
V
(V)
a
GS
1.5
0.5
10
2
1
0
8
6
4
2
0
-60
factor as a function of junction temperature
charge; typical values
0
0
PSMN9R0-25YLC
5V
20V
5
60
V
DS
4.5V
10
= 12V
120
Q
© NXP B.V. 2011. All rights reserved.
V
003aag207
003aag206
G
GS
T
(nC)
j
= 10V
( ° C)
180
15
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