SPP6308S36RG SYNC-POWER [SYNC POWER Crop.], SPP6308S36RG Datasheet

SPP6308S36RG

Manufacturer Part Number

SPP6308S36RG

Description

Dual P-Channel Enhancement Mode MOSFET

Manufacturer

SYNC-POWER [SYNC POWER Crop.]

Datasheet

1.SPP6308S36RG.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

SPP6308S36RGB

Quantity:

300 000

Current page: 1 of 8
Download datasheet (214Kb)

2006/12/12

DESCRIPTION

The SPP6308 is the Dual P-Channel enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. This high density

process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.

FEATURES

-20V/1.0A,R

-20V/0.8A,R

-20V/0.7A,R

P-Channel

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-363 (SC-70-6L) package design

Ver.1

such

SPP6308

Dual P-Channel Enhancement Mode MOSFET

DS(ON)

= 520mΩ@V

= 700mΩ@V

= 950mΩ@V

notebook

computer

=-4.5V

=-2.5V

=-1.8V

power

APPLICATIONS

PIN CONFIGURATION( SOT-363 / SC-70-6L)

PART MARKING

Power Management in Note book

Portable Equipment

Battery Powered System

DC/DC Converter

Load Switch

DSC

LCD Display inverter

Page 1

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SPP6308S36RG Summary of contents

Page 1

SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance ...

Page 2

... PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPP6308S36RG ※ Week Code : ※ SPP6308S36RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(T =150 ) ...

Page 3

SPP6308 Dual P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unless otherwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward ...

Page 4

SPP6308 Dual P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2006/12/12 Page 4 ...

Page 5

SPP6308 Dual P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2006/12/12 Page 5 ...

Page 6

SPP6308 Dual P-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2006/12/12 Page 6 ...

Page 7

SPP6308 Dual P-Channel Enhancement Mode MOSFET SOT-363 PACKAGE OUTLINE Ver.1 2006/12/12 Page 7 ...

Page 8

SPP6308 Dual P-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third ...

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