SPN1024S56RG SYNC-POWER [SYNC POWER Crop.], SPN1024S56RG Datasheet

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SPN1024S56RG

Manufacturer Part Number
SPN1024S56RG
Description
Dual N-Channel Enhancement Mode MOSFET
Manufacturer
SYNC-POWER [SYNC POWER Crop.]
Datasheet
2007/11/10
DESCRIPTION
The SPN1024 is the Dual N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
FEATURES
N-Channel
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-563 (SC-89-6L) package design
20V/0.65A,R
20V/0.55A,R
20V/0.45A,R
Ver.1
such
SPN1024
Dual N-Channel Enhancement Mode MOSFET
DS(ON)
DS(ON)
DS(ON)
as
=380mΩ@V
=450mΩ@V
=800mΩ@V
notebook
GS
GS
GS
computer
=4.5V
=2.5V
=1.8V
power
APPLICATIONS
PIN CONFIGURATION( SOT-563 / SC-89-6L)
PART MARKING
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
Page 1

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SPN1024S56RG Summary of contents

Page 1

SPN1024 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN1024 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance ...

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... PIN DESCRIPTION Pin ORDERING INFORMATION Part Number SPN1024S56RG ※ Week Code : ※ SPN1024S56RG : Tape Reel ; Pb – Free ABSOULTE MAXIMUM RATINGS (T =25 Unless otherwise noted) ℃ A Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(T =150 ) ...

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SPN1024 Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (T =25 Unless otherwise noted) ℃ A Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward ...

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SPN1024 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2007/11/10 Page 4 ...

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SPN1024 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2007/11/10 Page 5 ...

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SPN1024 Dual N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS Ver.1 2007/11/10 Page 6 ...

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SPN1024 Dual N-Channel Enhancement Mode MOSFET SOT-563 PACKAGE OUTLINE Ver.1 2007/11/10 Page 7 ...

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SPN1024 Dual N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third ...

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