bc817-25w Infineon Technologies Corporation, bc817-25w Datasheet - Page 3

• Manufacturer Part Number: bc817-25w
• Description: Npn Silicon Af Transistor Array
• Manufacturer: Infineon Technologies Corporation

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Emitter-base cutoff current
V
DC current gain
I
I
I
I
I
I
I
Collector-emitter saturation voltage
I
Base emitter saturation voltage
I
1
2
3
C
C
C
C
E
C
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
For all BC817 and BC818 subtypes
For all BC817K and BC818K subtypes
CB
CB
EB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 100 mA, V
= 100 mA, V
= 100 mA, V
= 300 mA, V
= 300 mA, V
= 300 mA, V
= 500 mA, V
= 500 mA, I
= 500 mA, I
= 4 V, I
= 25 V, I
= 25 V, I
C
C
E
E
B
B
E
E
= 0
= 0 , BC817...
= 0 , BC818...
= 0
B
B
= 0 , BC817...
= 0 , BC818...
= 0
= 0 , T
CE
CE
CE
CE
CE
CE
CE
1)
= 50 mA
= 50 mA
= 1 V, h
= 1 V, h
= 1 V, h
= 1 V, h
= 1 V, h
= 1 V, h
= 1 V, all h
A
= 150 °C
FE
FE
FE
FE
FE
FE
-grp.16
-grp.25
-grp.40
-grp.16
-grp.25
-grp.40
FE
1)
A
-grps.
= 25°C, unless otherwise specified
1)
2)
2)
2)
3)
3
Symbol
V
V
V
I
I
h
V
V
CBO
EBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
min.
100
160
250
100
170
60
40
45
25
50
30
5
-
-
-
-
-
Values
BC817.../BC818...
160
250
350
typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
max.
250
400
630
100
0.1
0.7
1.2
50
2008-04-11
-
-
-
-
-
-
-
-
-
Unit
V
-
V
µA
nA
-
V