bc817-25w Infineon Technologies Corporation, bc817-25w Datasheet - Page 6

• Manufacturer Part Number: bc817-25w
• Description: Npn Silicon Af Transistor Array
• Manufacturer: Infineon Technologies Corporation

Base-emitter saturation voltage
I
Transition frequency f
V
Ι
C
f
C
CE
T
= ƒ ( V
10
MHz
mA
10
10
10
10
10
10
10
5
5
5
= parameter in V, f = 2 GHz
5
5
-1
3
2
1
0
10
3
2
1
0
BC 817/818
BC 817/818
0
BEsat
), h
1.0
FE
10
150
-50
25 ˚C
1
= 10
˚C
˚C
T
2.0
= ƒ ( I
10
C
2
)
3.0
mA
EHP00218
Ι
EHP00222
V
C
V
BEsat
10
4.0
3
6
Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
BC817, BC818: - - - , BC817K, BC818K: ___
Ι
CBO
CBO
10
10
10
10
10
10
nA
pF
75
60
55
50
45
40
35
30
25
20
15
10
5
0
= 25 V
5
4
3
2
1
0
0
0
BC 817/818
2
4
6
50
8
max
BC817.../BC818...
10
CEB: BC817/BC818
CEB: BC817K/BC818K
CCB: BC817/BC818
CCB: BC817K/BC818K
CBO
12
typ
100
eb
14
= ƒ ( T
cb
2008-04-11
= ƒ ( V
= ƒ ( V
16
˚C
EHP00221
T
A
V
A
EB
V
)
CB
CB
)
/
150
V
20
)
EB