UNR9210J PANASONIC [Panasonic Semiconductor], UNR9210J Datasheet

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UNR9210J

Manufacturer Part Number
UNR9210J
Description
Silicon NPN epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Transistors with built-in Resistor
UNR921xJ Series
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
Publication date: January 2004
• Costs can be reduced through downsizing of the equipment and
• SS-Mini type package, allowing automatic insertion through tape
• UNR9210J (UN9210J)
• UNR9211J (UN9211J)
• UNR9212J (UN9212J)
• UNR9213J (UN9213J)
• UNR9214J (UN9214J)
• UNR9215J (UN9215J)
• UNR9216J (UN9216J)
• UNR9217J (UN9217J)
• UNR9218J (UN9218J)
• UNR9219J (UN9219J)
• UNR921AJ
• UNR921BJ
• UNR921CJ
• UNR921DJ (UN921DJ)
• UNR921EJ (UN921EJ)
• UNR921FJ (UN921FJ)
• UNR921KJ (UN921KJ)
• UNR921LJ (UN921LJ)
• UNR921MJ
• UNR921NJ
• UNR921TJ (UN921TJ)
• UNR921VJ
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
reduction of the number of parts.
packing.
Parameter
Marking Symbol (R
8L
8A
8B
8C
8D
8E
8F
8H
8I
8K
8X
8Y
8Z
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
Symbol
V
V
0.51 kΩ
T
100 kΩ
100 kΩ
4.7 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
P
I
T
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
22 kΩ
CBO
CEO
a
1 kΩ
C
stg
T
j
= 25°C
1
)
−55 to +125
Rating
100
125
125
Note) The part numbers in the parenthesis show conventional part number.
50
50
100 kΩ
5.1 kΩ
4.7 kΩ
4.7 kΩ
2.2 kΩ
10 kΩ
22 kΩ
47 kΩ
47 kΩ
10 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
47 kΩ
47 kΩ
47 kΩ
SJH00039BED
(R
(UN921xJ Series)
2
)
Unit
mW
mA
°C
°C
V
V
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
0.27
±0.02
(0.50)(0.50)
1.60
1.00
1
3
B
+0.05
–0.03
±0.05
2
R
R
1
2
SSMini3-F1 Package
0.12
C
E
+0.03
–0.01
Unit: mm
1

Related parts for UNR9210J

UNR9210J Summary of contents

Page 1

... Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • SS-Mini type package, allowing automatic insertion through tape packing. ■ Resistance by Part Number Marking Symbol (R • UNR9210J (UN9210J) 8L • UNR9211J (UN9211J) 8A • UNR9212J (UN9212J) 8B • UNR9213J (UN9213J) 8C • ...

Page 2

... Collector-emitter saturation voltage Output voltage high-level Output voltage low-level UNR9213J/921BJ/921KJ UNR921DJ UNR921EJ UNR921AJ Transition frequency Input UNR9218J resistance UNR9219J UNR921MJ/921VJ UNR9216J/921FJ/921LJ/921NJ UNR9211J/9214J/9215J/921KJ UNR9212J/9217J/921TJ UNR9210J/9213J/921DJ/921EJ UNR921AJ/921BJ 2 Transistors with built-in Resistor = 25°C ± 3°C a Symbol Conditions = 10 µ CBO mA, I ...

Page 3

... Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Common characteristics chart  150 125 100 120 160 ( °C ) Ambient temperature T a Characteristics charts of UNR9210J  1 25° 0 0 0.3 mA 0.6 mA ...

Page 4

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 5

Transistors with built-in Resistor Characteristics charts of UNR9212J  160 = 25° 1 0.9 mA 0.7 mA 0.8 mA 120 0.6 mA 0 0.3 mA 0.2 ...

Page 6

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 7

Transistors with built-in Resistor Characteristics charts of UNR9215J  160 = 25° 1 0.9 mA 0.8 mA 120 0.7 mA 0.6 mA 0 0.3 mA 0.2 ...

Page 8

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 9

Transistors with built-in Resistor Characteristics charts of UNR9218J  240 = 25° 200 = I 1 0.9 mA 160 0.8 mA 0.7 mA 120 0 0.5 mA 0.4 mA 0.3 ...

Page 10

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts ...

Page 11

Transistors with built-in Resistor Characteristics charts of UNR921BJ  120 = 25° 0 100 ...

Page 12

UNR921xJ Series  MHz = 25° Collector-base voltage V CB Characteristics charts of UNR921DJ  ...

Page 13

Transistors with built-in Resistor Characteristics charts of UNR921EJ  1 25° 0 0.2 mA 0 ...

Page 14

UNR921xJ Series  MHz = 25° − Collector-base voltage Characteristics charts ...

Page 15

Transistors with built-in Resistor Characteristics charts of UNR921LJ  240 = 25° 200 160 = I 1 0.8 mA 120 ...

Page 16

UNR921xJ Series  MHz = 25° − Collector-base voltage V CB Characteristics charts of ...

Page 17

Transistors with built-in Resistor Characteristics charts of UNR921TJ  160 = 25° 1 0.9 mA 120 0.8 mA 0.7 mA 0.6 mA 0 0.3 mA 0.2 ...

Page 18

UNR921xJ Series  MHz = 25° Collector-base voltage  ...

Page 19

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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