UNR9210J PANASONIC [Panasonic Semiconductor], UNR9210J Datasheet - Page 3

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UNR9210J

Manufacturer Part Number
UNR9210J
Description
Silicon NPN epitaxial planar type
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
Transistors with built-in Resistor
■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Emitter-base resistance UNR921CJ
Rasistance UNR921MJ
ratio
Common characteristics chart
Characteristics charts of UNR9210J
150
125
100
75
50
25
60
50
40
30
20
10
0
0
0
0
Collector-emitter voltage V
Ambient temperature T
2
UNR921NJ
UNR9218J/9219J
UNR9214J
UNR921TJ
UNR921FJ
UNR921AJ/921VJ
UNR9211J/9212J/9213J/921LJ
UNR921KJ
UNR921EJ
UNR921DJ
Parameter
I
40
B
= 1.0 mA
0.3 mA
4
I
P
C
0.9 mA
T
 V
0.8 mA
 T
80
6
0.7 mA
CE
0.6 mA
a
8
0.5 mA
120
T
0.4 mA
a
a
= 25°C
CE
( °C )
10
0.1 mA
( V )
160
12
Symbol
R
R
1
/R
2
2
10
10
10
10
−1
−2
10
1
2
−1
a
−25°C
Collector current I
SJH00039BED
= 25°C ± 3°C
V
1
CE(sat)
25°C
Conditions
 I
10
C
T
C
a
I
( mA )
C
= 75°C
/ I
B
= 10
10
2
400
300
200
100
−30%
0
0.08
0.17
0.37
1.70
1.70
Min
1
0.8
3.7
UNR921xJ Series
Collector current I
0.047
0.10
0.21
0.47
0.47
2.13
2.14
Typ
0.1
1.0
1.0
4.7
47
10
h
FE
 I
+30%
Max
0.12
0.25
0.57
2.60
2.60
1.2
5.7
T
10
C
a
2
= 75°C
C
V
25°C
−25°C
( mA )
CE
= 10 V
Unit
kΩ
10
3
3

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