IS61LV5128-10 Integrated Silicon Solution Inc, IS61LV5128-10 Datasheet - Page 3

• Manufacturer Part Number: IS61LV5128-10
• Description: 512K x 8 HIGH-SPEED CMOS STATIC RAM
• Manufacturer: Integrated Silicon Solution Inc

IS61LV5128
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/16/01
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-
OPERATING RANGE
Symbol
C
C
Symbol
V
T
T
P
nent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
Range
Commercial
Industrial
BIAS
STG
I/O
TERM
T
IN
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Parameter
Parameter
Input Capacitance
Input/Output Capacitance
A
(1,2)
= 25°C, f = 1 MHz, Vcc = 3.3V.
Ambient Temperature
–40°C to +85°C
0°C to +70°C
(1)
Conditions
V
V
OUT
IN
= 0V
= 0V
3.3V +10%, -5%
3.3V +10%, -5%
–0.5 to Vcc + 0.5
–55 to +125
–65 to +150
10 ns
Value
V
1.0
CC
Max.
6
8
Unit
°C
°C
W
V
Unit
pF
pF
12 ns, 15 ns
3.3V ± 10%
3.3V ± 10%
V
CC
ISSI
®
3