IS61LV5128-10 Integrated Silicon Solution Inc, IS61LV5128-10 Datasheet - Page 5

• Manufacturer Part Number: IS61LV5128-10
• Description: 512K x 8 HIGH-SPEED CMOS STATIC RAM
• Manufacturer: Integrated Silicon Solution Inc

IS61LV5128
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
AC TEST LOADS
Figure 1
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/16/01
AC TEST CONDITIONS
Symbol
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1.
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
OUTPUT
(2)
(2)
(2)
(2)
3.3V
Including
jig and
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CE to Low-Z Output
CE to High-Z Output
Power Up Time
Power Down Time
scope
30 pF
319 Ω
353 Ω
See Figures 1 and 2
Min.
10
—
—
—
—
3
0
0
3
0
0
0V to 3.0V
-10 ns
1.5V
Unit
3 ns
Figure 2
Max.
—
10
—
10
—
—
—
10
4
4
4
OUTPUT
(1)
(Over Operating Range)
3.3V
Min.
Including
12
—
—
—
—
3
0
0
3
0
0
-12 ns
jig and
scope
5 pF
319 Ω
Max.
—
12
—
12
—
—
—
12
5
5
6
353 Ω
Min.
15
—
—
—
—
3
0
0
3
0
0
-15 ns
Max.
15
15
15
—
—
—
—
—
6
8
7
ISSI
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
®
5