M58LW032 STMICROELECTRONICS [STMicroelectronics], M58LW032 Datasheet - Page 47

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M58LW032

Manufacturer Part Number
M58LW032
Description
32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Table 28. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
Table 29. Device Geometry Definition
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
Address A21-A1
Address A21-A1
2Ah
2Bh
2Ch
2Dh
2Eh
1Bh
1Ch
1Dh
1Eh
27h
28h
29h
2Fh
30h
1Fh
20h
21h
22h
23h
24h
25h
26h
00h
27h
36h
00h
00h
00h
Data
Data
3Fh
16h
01h
00h
05h
00h
01h
00h
00h
01h
0Ah
04h
08h
04h
04h
04h
(3)
(1)
(1)
(2)
(3)
(2)
n where 2
Device Interface
Maximum number of bytes in Write Buffer, 2
Bit7-0 = number of Erase Block Regions in device
Number (n-1) of Erase Blocks of identical size; n=64
Erase Block Region Information
x 256 bytes per Erase block (128K bytes)
V
V
V
V
2
2
2
2
2
2
2
2
n
n
n
n
n
n
n
n
DD
DD
PP
PP
x typical for buffer write time-out max
µs typical time-out for Word, DWord prog – Not Available
µs, typical time-out for max buffer write
ms, typical time-out for Erase Block
ms, typical time-out for chip erase – Not Available
x typical for Word Dword time-out max – Not Available
x typical for individual block erase time-out maximum
x typical for chip erase max time-out – Not Available
min – Not Available
max – Not Available
Min, 2.7V
max, 3.6V
n
is number of bytes memory Size
Description
Description
n
M58LW032A
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