HYB18L256169BF QIMONDA [Qimonda AG], HYB18L256169BF Datasheet - Page 42

• Manufacturer Part Number: HYB18L256169BF
• Description: 256-Mbit Mobile-RAM
• Manufacturer: QIMONDA [Qimonda AG]

3.2
Table 20
Parameter
Clock cycle time
Clock frequency
Access time from CLK
Clock high-level width
Clock low-level width
Address, data and command input setup time
Address and command input hold time
Data (DQ) input hold time
MODE REGISTER SET command period
DQ low-impedance time from CLK
DQ high-impedance time from CLK
Data out hold time
DQM to DQ High-Z delay (READ Commands)
DQM write mask latency
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE bank A to ACTIVE bank B delay
ACTIVE to PRECHARGE command period
WRITE recovery time
PRECHARGE command period
Refresh period (8192 rows)
Self refresh exit time
1) 0 °C ≤
2) All parameters assumes proper device initialization.
3) AC timing tests measured at 0.9 V.
4) The transition time
5) Specified
6) If
7) If
8) These parameter account for the number of clock cycles and depend on the operating frequency, as follows:
9) The write recovery time of
Data Sheet
no. of clock cycles = specified delay / clock period; round up to next integer.
With
recovery time in all applications.
I/O
t
t
T
T
(CLK) > 1 ns, a value of (
> 1 ns, a value of [0.5 x (
f
CK
T
C
> 72 MHz two clock cycles for
≤ 70 °C (comm.); -25 °C ≤
t
AC Characteristics
AC Characteristics
AC
30 pF
and
t
OH
t
T
is measured between
parameters are measured with a 30 pF capacitive load only as shown below:
t
WR
t
t
T
T
/2 - 0.5) ns has to be added to this parameter.
= 14 ns allows the use of one clock cycle for the write recovery time when
- 1)] ns has to be added to this parameter.
1)2)3)4)
T
C
t
≤ 85 °C (extended);
WR
are mandatory. Qimonda recommends to use two clock cycles for the write
V
IH
and
CL = 3
CL = 2
CL = 3
CL = 2
CL = 3
CL = 2
V
IL
; all AC characteristics assume
42
V
DD
Symbol
=
t
t
t
t
t
t
t
t
SREX
t
t
DQW
t
f
t
t
t
MRD
t
t
RCD
RRD
t
t
DQZ
RAS
REF
t
t
WR
CH
OH
RC
V
CK
CK
AC
CL
HZ
RP
LZ
IS
IH
DDQ
= 1.70V to 1.95V;
min.
7.5
9.5
2.5
2.5
1.5
0.5
0.8
1.0
3.0
2.5
—
—
—
—
—
67
19
15
45
14
19
—
2
0
1
HY[B/E]18L256169BF-7.5
- 7.5
t
T
= 1 ns.
256-Mbit Mobile-RAM
Electrical Characteristics
max.
100k
133
105
02032006-MP0M-7FQG
5.4
6.0
7.0
64
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2
Rev. 1.02, 2006-12
f
MHz
MHz
Unit
CK
ms
t
t
t
t
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
≤ 72 MHz.
Notes
5)6)
5)6)
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7)
7)
8)
8)
8)
8)
9)
8)