ADP3415LRM-REEL AD [Analog Devices], ADP3415LRM-REEL Datasheet - Page 2

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ADP3415LRM-REEL

Manufacturer Part Number
ADP3415LRM-REEL
Description
Dual MOSFET Driver with Bootstrapping
Manufacturer
AD [Analog Devices]
Datasheet

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ADP3415–SPECIFICATIONS
Parameter
SUPPLY (VCC)
UNDERVOLTAGE LOCKOUT
(UVLO)
LOW-SIDE DRIVER SHUTDOWN
(DRVLSD)
SHUTDOWN (SD)
INPUT (IN)
THERMAL SHUTDOWN (THSD)
HIGH-SIDE DRIVER (DRVH)
LOW-SIDE DRIVER (DRVL)
NOTES
1
2
3
4
5
6
7
Specifications subject to change without notice.
All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods.
Including I
The signal source driving the pin must have 70 µA (typ) pull-down strength to make a high-to-low transient, and 20 µA (typ) pull-up strength to make a low-to-high
transient. The pin does not represent load (<100 nA) in static low (<0.8 V) and static high (>2.0 V) logic states (see TPC 3.) The pin can be driven with standard
TTL logic level source.
Guaranteed by characterization.
For propagation delays, tpdh refers to the specified signal going high, tpdl refers to it going low.
Propagation delay measured until DRVL begins its transition.
The turn-on of DRVL is initiated after IN goes low by either V
Quiescent Current
UVLO Threshold
UVLO Hysteresis
Input Voltage High
Input Voltage Low
Propagation Delay
Input Voltage High
Input Voltage Low
Input Voltage High
Input Voltage Low
THSD Threshold
THSD Hysteresis
Output Resistance, DRVH–BST
Output Resistance, DRVH–SW
DRVH Transition Times
DRVH Propagation Delay
Output Resistance, DRVL–VCC
Output Resistance, DRVL–GND
DRVL Transition Times
DRVL Propagation Delay
SW Transition Timeout
Zero-Crossing Threshold
Shutdown Mode
Operating Mode
(See Figure 3)
(See Figure 4)
(See Figure 4)
(See Figure 4)
(See Figure 4)
BSTQ
quiescent current.
3, 4
2
3
3
3
3
3
3
7
4
4
4, 5, 6
4, 5
Symbol
I
V
V
V
V
tpdl
tpdh
V
V
V
V
T
T
tr
tf
tpdh
tpdl
tr
tf
tpdh
tpdl
t
V
CCQ
SWTO
DRVH
DRVL
CCUVLO
CCHUVLO
IH
IL
IH
IL
IH
IL
DRVH
DRVL
ZC
SD
HSD
DRVLSD
DRVH
DRVL
DRVLSD
DRVH
DRVL
SW
crossing a ~1.6 V threshold or by expiration of t
1
(T
unless otherwise noted.)
Conditions
V
V
T
T
V
V
R
V
V
V
V
V
A
SD
SD
J
J
BST
BST
DLY
BST
BST
BST
BST
BST
= 0 C to 100 C, V
= T
= T
= 0.8 V
= 5 V, No Switching
– V
– V
– V
– V
– V
– V
– V
–2–
≥ 120 kΩ
A
A
SW
SW
SW
SW
SW
SW
SW
= 4.6 V
= 4.6 V, V
= 4.6 V
= 4.6 V
= 4.6 V
= 4.6 V
= 4.6 V
CC
= 5 V, V
DLY
= 0 V
BST
– V
SWTO
SW
.
= 5 V, SD = 5 V, C
Min
3.9
2.0
2.0
2.0
10
100
10
130
Typ
30
1.2
4.15
0.05
20
10
165
10
1.5
0.85
20
25
22
40
1.6
1.0
25
20
30
10
1.6
DRVH
= C
Max
65
2
4.5
0.8
50
30
0.8
0.8
3.5
2.0
30
35
40
200
70
3.0
3.0
40
30
38
25
300
DRVL
= 3 nF,
REV. B
V
Unit
µA
mA
V
V
V
ns
ns
V
V
V
V
°C
°C
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
V

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