BCR3PM-12LG_10 RENESAS [Renesas Technology Corp], BCR3PM-12LG_10 Datasheet - Page 2
BCR3PM-12LG_10
Manufacturer Part Number
BCR3PM-12LG_10
Description
Triac
Manufacturer
RENESAS [Renesas Technology Corp]
Datasheet
1.BCR3PM-12LG_10.pdf
(8 pages)
BCR3PM-12LG
Electrical Characteristics
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger curent
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
1. Junction temperature
2. Rate of decay of on-state commutating current
3. Peak off-state voltage
R07DS0099EJ0300 Rev.3.00
Sep 13, 2010
Tj = 125C/150C
(di/dt)c = –1.5 A/ms
V
D
= 400 V
3. The contact thermal resistance R
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Parameter
Note2
Note2
Note4
Test conditions
Symbol
(dv/dt)c
V
R
I
V
V
I
I
I
RGT
V
V
RGT
RGT
DRM
FGT
th (j-c)
RGT
FGT
TM
GD
th (c-f)
0.2/0.1
Min.
5/1
in case of greasing is 0.5C/W.
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
Commutating voltage and current waveforms
Max.
2.0
1.5
1.5
1.5
1.5
5.2
20
20
20
—
—
Supply Voltage
Main Voltage
Main Current
C/W
V/s
Unit
mA
mA
mA
mA
V
V
V
V
V
(inductive load)
(dv/dt)c
Tj = 150C, V
Tc = 25C, I
instantaneous measurement
Tj = 25C, V
R
Tj = 25C, V
R
Tj = 125C/150C, V
Junction to case
Tj = 125C/150C
G
G
= 330
= 330
Test conditions
(di/dt)c
TM
D
D
DRM
= 6 V, R
= 6 V, R
= 4.5 A,
Note3
Time
Time
Time
applied
V
D
Preliminary
D
Page 2 of 7
= 1/2 V
L
L
= 6 ,
= 6 ,
DRM