BUK104-50SP PHILIPS [NXP Semiconductors], BUK104-50SP Datasheet - Page 7

• Manufacturer Part Number: BUK104-50SP
• Description: PowerMOS transistor Logic level TOPFET
• Manufacturer: PHILIPS [NXP Semiconductors]

Philips Semiconductors
January 1993
PowerMOS transistor
Logic level TOPFET
100
0.1
I
10
D
1
% = 100 I
Fig.4. Normalised limiting power dissipation.
I
Fig.5. Normalised continuous drain current.
D
1
120
110
100
120
110
100
ID & IDM / A
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
& I
Fig.6. Safe operating area. T
0
0
0
0
DM
PD%
ID%
P
= f(V
D
D
% = 100 P
/I
20
20
D
Overload protection characteristics not shown
(25 ˚C) = f(T
DS
DC
); I
40
40
10
DM
D
single pulse; parameter t
60
60
/P
Tmb / C
Tmb / C
VDS / V
D
(25 ˚C) = f(T
mb
Normalised Current Derating
80
80
Normalised Power Derating
); conditions: V
100
100
100
100 ms
tp =
100 us
mb
10 ms
10 us
1 ms
120
120
= 25 ˚C
mb
)
BUK104-50L/S
140
140
IS
= 5 V
p
7
Fig.9. Typical on-state characteristics, T
0.01
50
40
30
20
10
20
15
10
Fig.8. Typical output characteristics, T
0.1
0
ID = f(V
5
0
10
1
1E-07
0
ID / A
0
ID / A
Zth / (K/W)
Fig.7. Transient thermal impedance.
D =
0.05
0.02
I
D
0.5
0.2
0.1
0
4
DS
= f(V
Z
); parameter V
th j-mb
1E-05
DS
8
); parameter V
= f(t); parameter D = t
12
VIS / V =
VDS / V
VDS / V
1E-03
t / s
IS
16
1
; t
BUK104-50LP/SP
P
D
p
= 250 s & t
IS
BUK104-50L/S
20
; t
Product specification
10
t
p
p
T
= 250 s
1E-01
VIS / V =
24
BUK104-50L/S
p
D =
/T
7
BUK104-50L/S
BUK104-50L/S
j
= 25 ˚C.
j
t
T
p
t
= 25 ˚C.
10
p
28
Rev 1.200
9
< t
8
7
1E+01
6
6
5
d sc
5
4
3
2
3
4
32
2