BH616UV1611_08 BSI [Brilliance Semiconductor], BH616UV1611_08 Datasheet

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BH616UV1611_08

Manufacturer Part Number
BH616UV1611_08
Description
Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
Manufacturer
BSI [Brilliance Semiconductor]
Datasheet
R0201-BH616UV1611
Wide V
Ultra low power consumption :
High speed access time :
Automatic power down when chip is deselected
Easy expansion with CE1, CE2 and OE options
I/O Configuration x8/x16 selectable by LB and UB pin.
Three state outputs and TTL compatible
Fully static operation, no clock, no refresh
Data retention supply voltage as low as 1.0V
FEATURES
POWER CONSUMPTION
PIN CONFIGURATIONS
Brilliance Semiconductor, Inc.
Detailed product characteristic test report is available upon request and being accepted.
V
V
-55/-70
BH616UV1611AI
CC
CC
C
D
G
H
A
B
E
F
PRODUCT
= 3.6V
= 1.2V
FAMILY
CC
low operation voltage : 1.65V ~ 3.6V
DQ14
DQ15
VCC
DQ8
DQ9
VSS
A18
LB
1
Operation current : 12mA (Max.) at 55ns
Standby current : 30uA (Max.) at 3.6V/85
Data retention current : 15uA(Max.) at 85
55ns (Max.) at V
70ns (Max.) at V
DQ10
DQ11
DQ12
DQ13
48-ball BGA top view
A19
OE
UB
A8
2
TEMPERATURE
-40
OPERATING
Industrial
O
A17
A14
A12
NC
A0
A3
A5
A9
C to +85
3
Pb-Free and Green package materials are compliant to RoHS
Ultra Low Power/High Speed CMOS SRAM
1M X 16 bit
CC
CC
A16
A15
A13
A10
A1
A4
A6
A7
4
=3.0V
=1.8V
O
C
2mA (Max.) at 1MHz
DQ1
DQ3
DQ4
DQ5
CE1
WE
A11
V
A2
5
CC
30uA
=3.6V V
STANDBY
(I
CCSB1
DQ0
DQ2
VCC
VSS
DQ6
DQ7
CE2
NC
6
reserves the right to change products and specifications without notice.
, Max)
CC
25uA
=1.8V
O
C
O
C
1MHz
2mA
1
POWER DISSIPATION
The BH616UV1611 is a high performance, ultra low power CMOS
Static Random Access Memory organized as 1,048,576 by 16 bits
and operates in a wide range of 1.65V to 3.6V supply voltage.
Advanced CMOS technology and circuit techniques provide both
high speed and low power features with maximum standby current of
39uA at 3.6V/85
3.0V/1.8V.
Easy memory expansion is provided by an active LOW chip enable
(CE1), an active HIGH chip enable (CE2) and active LOW output
enable (OE) and three-state output drivers.
The BH616UV1611 has an automatic power down feature, reducing
the power consumption significantly when chip is deselected.
The BH616UV1611 is made with two chips of 8Mbit SRAM by
stacked multi-chip-package.
The BH616UV1611 is available in 48-ball BGA package.
CE2, CE1
V
10MHz
CC
6mA
DQ15
DESCRIPTION
BLOCK DIAGRAM
DQ0
=3.6V
A12
A11
A10
WE
V
OE
UB
V
A9
A8
A7
A6
A5
A4
A3
LB
.
.
.
.
.
.
CC
SS
.
.
.
.
.
.
12mA
Address
Buffer
f
Input
Max.
Operating
Control
(I
O
CC
16
16
C and maximum access time of 55/70ns at
, Max)
10
1.5mA
1MHz
Output
Buffer
Buffer
Data
Input
Data
Decoder
Row
V
10MHz
CC
BH616UV1611
5mA
16
=1.8V
16
1024
A19
8mA
f
A18
Max.
A17
Address Input Buffer
Revision
Oct.
Column Decoder
A15
Memory Array
1024 x 16384
Write Driver
Column I/O
Sense Amp
BGA-48-0608
PKG TYPE
A14
A13
16384
1024
10
A16 A2 A1
2008
1.1
A0

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BH616UV1611_08 Summary of contents

Page 1

Ultra Low Power/High Speed CMOS SRAM bit Pb-Free and Green package materials are compliant to RoHS FEATURES Wide V low operation voltage : 1.65V ~ 3.6V CC Ultra low power consumption : V = 3.6V Operation current ...

Page 2

PIN DESCRIPTIONS Name A0-A19 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input LB and UB Data Byte Control Input DQ0-DQ15 Data Input/Output Ports TRUTH ...

Page 3

ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER Terminal Voltage with V TERM Respect to GND Temperature Under T BIAS Bias T Storage Temperature STG P Power Dissipation Output Current OUT 1. Stresses greater than those listed under ABSOLUTE MAXIMUM ...

Page 4

DATA RETENTION CHARACTERISTICS (T SYMBOL PARAMETER V V for Data Retention Data Retention Current CCDR Chip Deselect to Data t CDR Retention Time t Operation Recovery Time R 1. Typical characteristics are ...

Page 5

AC ELECTRICAL CHARACTERISTICS (T READ CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Read Cycle Time AVAX Address Access Time AVQX Chip Select Access Time E1LQV ACS1 t t Chip Select Access Time E2LQV ...

Page 6

READ CYCLE 2 CE1 CE2 D OUT (1, 4) READ CYCLE 3 ADDRESS OE CE1 CE2 LB OUT NOTES high in read Cycle. 2. Device is continuously selected when CE1 = V 3. Address ...

Page 7

AC ELECTRICAL CHARACTERISTICS (T WRITE CYCLE JEDEC PARANETER PARAMETER NAME NAME t t Write Cycle Time AVAX Address Set up Time AVWL Address Valid to End of Write AVWH Chip Select ...

Page 8

WRITE CYCLE 2 ADDRESS CE1 CE2 LB OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 ...

Page 9

ORDERING INFORMATION BH616UV1611 Note: Brilliance Semiconductor Inc. (BSI) assumes no responsibility for the application or use of any product or circuit described herein. BSI does not authorize its products for use as critical components in any application in which the ...

Page 10

Revision History Revision No. History 1.0 Initial Production Version - E3 pin is NC pin 1.1 Change -55 55ns(Max 55ns(Max =1.8V CC Typical value of standby current is replaced by maximum value in Featues section ...

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