BSS123W_0711 DIODES [Diodes Incorporated], BSS123W_0711 Datasheet - Page 2

• Manufacturer Part Number: BSS123W_0711
• Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Electrical Characteristics
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Rise Time
Turn-Off Fall Time
Turn-On Delay Time
Turn-Off Delay Time
5. Short duration pulse test used to minimize self-heating effect.
BSS123W
Document number: DS30368 Rev. 8 - 2
0.2
0.7
0.6
0.5
0.4
0.3
0.1
0
0
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 1 On-Region Characteristics
1
Characteristic
2
@T
3
A
= 25°C unless otherwise specified
4
5
www.diodes.com
Symbol
R
BV
V
t
t
I
D(OFF)
DS (ON)
I
GSSF
C
D(ON)
2 of 4
V
C
C
GS(th)
g
DSS
t
FS
SD
oss
t
rss
DSS
iss
r
f
Min
100
0.8
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.0
1.2
2.4
0.8
1.6
0.84
Typ Max
370
1.4
29
10
0.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
Fig. 2 On-Resistance Variation with Gate Voltage
1.0
2.0
6.0
1.3
⎯
10
50
10
⎯
60
15
16
13
6
8
8
I , DRAIN-SOURCE CURRENT (A)
0.2
D
Unit
mS
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
V
and Drain-Source Current
V
V
V
V
V
V
V
V
V
V
V
R
0.3
GS
DS
DS
GS
DS
GS
GS
DS
GS
DS
DD
GEN
= 100V, V
= 20V, V
= 10V, I
= 30V, I
= 0V, I
= 20V, V
= V
= 10V, I
= 4.5V, I
= 0V, I
= 25V, V
= 50Ω, V
GS
, I
0.4
D
S
Test Condition
D
D
D
D
= 250μA
= 0.34A
GS
D
DS
GS
= 0.17A, f = 1.0KHz
= 1mA
= 0.28A,
GS
= 0.17A
= 0.17A
GS
= 0V
= 0V
= 0V, f = 1.0MHz
= 0V
= 10V
0.5
BSS123W
© Diodes Incorporated
November 2007
0.6