BSS123W_0711 DIODES [Diodes Incorporated], BSS123W_0711 Datasheet - Page 3

• Manufacturer Part Number: BSS123W_0711
• Description: N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
• Manufacturer: DIODES [Diodes Incorporated]

Ordering Information
Marking Information
Notes:
Date Code Key
BSS123W
Document number: DS30368 Rev. 8 - 2
Month
Code
Year
Code
1.2
0.9
0.8
0.7
1.1
50
40
30
10
20
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
-50
0
1
0
Fig. 3 Gate Threshold Variation with Temperature
BSS123W-7-F
Part Number
-25
T , JUNCTION TEMPERATURE (ºC)
V , DRAIN-SOURCE VOLTAGE (V)
J
2002
Jan
DS
5
N
1
0
Fig. 5 Typical Capacitance
25
10
Feb
2003
2
(Notes 4 & 6)
P
50
K23
15
Mar
75
V
I = 250 A
D
2004
3
DS
R
= V
100 125
GS
μ
20
Apr
4
2005
S
25
150
www.diodes.com
May
5
K23 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
2006
SOT-323
T
Case
3 of 4
Jun
6
2007
U
250
200
150
100
2.2
1.8
1.6
1.2
0.6
0.4
1.4
0.8
50
2
0
-50
1
0
Jul
7
Fig. 4 On-Resistance Variation with Temperature
Fig. 6 Power Derating Curve, Total Package
2008
-25
V
T , JUNCTION TEMPERATURE (ºC)
T , AMBIENT TEMPERATURE (°C)
J
Aug
A
8
0
2009
W
25
Sep
9
100
50
3000/Tape & Reel
2010
Packaging
X
75
Oct
O
100 125 150
2011
Y
BSS123W
Nov
N
© Diodes Incorporated
November 2007
200
2012
Dec
Z
D