SSM3K15FU_07 TOSHIBA [Toshiba Semiconductor], SSM3K15FU_07 Datasheet
SSM3K15FU_07
Manufacturer Part Number
SSM3K15FU_07
Description
High Speed Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.SSM3K15FU_07.pdf
(5 pages)
High Speed Switching Applications
Analog Switch Applications
•
•
Absolute Maximum Ratings
Marking
Handling Precaution
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
Small package
Low on resistance
: R
: R
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature
Note:
Note 1: Mounted on FR4 board
on
on
1
= 4.0 Ω (max) (@V
= 7.0 Ω (max) (@V
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.6 mm
Characteristics
D P
3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
0.6 mm
2
GS
GS
Pulse
DC
= 4 V)
= 2.5 V)
1.0 mm
SSM3K15FU
(Ta = 25°C)
Equivalent Circuit
Symbol
P
V
V
T
D
I
T
GSS
I
DP
DS
stg
D
(Note 1)
ch
1
−55~150
Rating
3
2
±20
100
200
150
150
30
× 3)
1
2
Unit
mW
mA
°C
°C
V
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
SSM3K15FU
2-2E1E
SC-70
2007-11-01
―
Unit: mm
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SSM3K15FU_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications • Small package • Low on resistance : R = 4.0 Ω (max) (@ 7.0 Ω ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Switching Time Test Circuit (a) Test ...
Page 3
I – 250 Common Source Ta = 25° 200 150 100 2 0.5 1 1.5 Drain-Source voltage V ( – (ON ...
Page 4
1000 Common Source 500 25°C 300 100 100 Drain current I (mA – 10000 Common ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...