FDC6420 Fairchild Semiconductor, FDC6420 Datasheet
FDC6420
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FDC6420 Summary of contents
Page 1
... Reel Size 7’’ September 2001 4.5 V DS(ON 2.5 V DS(ON 125 –4.5 V DS(ON 190 –2.5 V DS(ON) GS Q2( Q1( Units 20 – 3.0 –2 –6 0.96 0.9 W 0.7 –55 to +150 C C/W 130 C/W 60 Tape width Quantity 8mm 3000 units FDC6420C Rev C(W) ...
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... V –0.6 –1.0 –1.5 mV/ C –3 – 106 71 100 125 190 145 184 137 12 A – 324 pF 337 1 3.3 4.6 nC 3.7 0.95 nC 0.68 0.7 nC 1.3 FDC6420C Rev C(W) ...
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... 0 (Note determined by the user's board design 140 °C/W when 2 mounted on a .004 in pad copper Min Typ Max Units 0 –0.8 Q2 0.7 1.2 V –0.8 –1.2 c) 180 C°/W when mounted on a minimum pad. FDC6420C Rev C(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6420C Rev C( 1.2 ...
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... Figure 8. Capacitance Characteristics 1ms 10ms 0.1 10 100 Figure 10. Single Pulse Maximum MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 180°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. FDC6420C Rev C(W) 20 ...
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... Source Current and Temperature -2.0V GS -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6420C Rev C( 1.2 ...
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... OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 180°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 180°C/W JA P(pk ( Duty Cycle 100 1000 FDC6420C Rev C(W) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...