FDC6420 Fairchild Semiconductor, FDC6420 Datasheet - Page 7

• Manufacturer Part Number: FDC6420
• Description: 20V N & P-Channel PowerTrench MOSFETs
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
Figure 19. Maximum Safe Operating Area.
5
4
3
2
1
0
0.001
0.1
10
Figure 17. Gate Charge Characteristics.
0.01
1
0
0.1
0.1
0.0001
1
I
D
R
SINGLE PULSE
R
= -2.2A
DS(ON)
V
JA
T
GS
A
= 180
= 25
LIMIT
= -4.5V
D = 0.5
1
o
o
C
C/W
0.2
0.1
0.05
SINGLE PULSE
-V
0.02
0.01
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
1
0.001
g
, GATE CHARGE (nC)
2
DC
10s
Figure 21. Transient Thermal Response Curve.
V
1s
DS
3
=- 5V
100ms
Transient thermal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1c.
10
0.01
-15V
10ms
4
-10V
100
0.1
5
t
1
, TIME (sec)
5
4
3
2
1
0
600
500
400
300
200
100
0.1
Figure 18. Capacitance Characteristics.
0
0
Figure 20. Single Pulse Maximum
1
1
-V
Power Dissipation.
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
C
RSS
10
C
t
1
OSS
, TIME (sec)
10
10
C
ISS
P(pk)
Duty Cycle, D = t
T
R
J
R
100
- T
JA
100
JA
SINGLE PULSE
R
(t) = r(t) * R
A
15
t
= 180°C/W
JA
1
T
= P * R
t
A
2
= 180°C/W
FDC6420C Rev C(W)
= 25°C
V
f = 1MHz
GS
= 0 V
JA
1
JA
(t)
/ t
1000
2
20
1000