AM29LV001B AMD [Advanced Micro Devices], AM29LV001B Datasheet - Page 35

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AM29LV001B

Manufacturer Part Number
AM29LV001B
Description
1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet

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ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25 C, 3.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Includes all pins except V
TSOP PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
PLCC PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
35
Parameter
Sector Erase Time
Chip Erase Time
Byte Programming Time
Chip Programming Time (Note 3)
Input voltage with respect to V
(including A9, OE#, and RESET#)
Input voltage with respect to V
V
CC
Parameter Symbol
programming typicals assume checkerboard pattern.
program faster than the maximum program times listed.
Table 5 for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
C
IN
C
C
OUT
IN2
IN
A
A
= 25°C, f = 1.0 MHz.
= 25°C, f = 1.0 MHz.
CC
Input Capacitance
Output Capacitance
Control Pin Capacitance
. Test conditions: V
Control Pin Capacitance
Parameter Description
Description
Output Capacitance
SS
SS
Input Capacitance
on all pins except I/O pins
on all I/O pins
Parameter Description
CC
Typ (Note 1)
= 2.7 V (3.0 V for -45R), 1,000,000 cycles.
CC
0.7
1.1
7
9
= 3.0 V, one pin at a time.
P R E L I M I N A R Y
Am29LV001B
Max (Note 2)
300
3.3
15
V
V
V
IN
OUT
PP
Test Setup
= 0
V
= 0
V
V
OUT
= 0
Test Setup
IN
IN
= 0
= 0
= 0
–100 mA
–1.0 V
–1.0 V
Min
CC
Unit
µs
s
s
s
, 1,000,000 cycles. Additionally,
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Typ
Typ
4
8
8
8.5
7.5
6
Comments
V
Max
Max
CC
+100 mA
7.5
12
12
12
6
13.0 V
9
Max
+ 1.0 V
Unit
Unit
pF
pF
pF
pF
pF
pF

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