AM29LV001B AMD [Advanced Micro Devices], AM29LV001B Datasheet - Page 8

• Manufacturer Part Number: AM29LV001B
• Description: 1 Megabit (128 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
• Manufacturer: AMD [Advanced Micro Devices]

nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the Autoselect Mode and Autoselect
Command Sequence sections for more information.
I
tive current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I
read specifications apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris-
tics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the de-
vice, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at V
(Note that this is a more restricted voltage range than
V
V
the standby current will be greater. The device requires
standard access time (t
device is in either of these standby modes, before it is
ready to read data.
The device also enters the standby mode when the RE-
SET# pin is driven low. Refer to the next section, RE-
SET#: Hardware Reset Pin.
If the device is deselected during erasure or program-
ming, the device draws active current until the
operation is completed.
I
standby current specification.
CC2
CC3
IH
CC
.) If CE# and RESET# are held at V
in the DC Characteristics table represents the ac-
in the DC Characteristics table represents the
0.3 V, the device will be in the standby mode, but
CE
) for read access when the
IH
, but not within
CC
P R E L I M I N A R Y
0.3 V.
Am29LV001B
CC
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically enables
this mode when addresses remain stable for t
ns. The automatic sleep mode is independent of the
CE#, WE#, and OE# control signals. Standard address
access timings provide new data when addresses are
changed. While in sleep mode, output data is latched
and always available to the system. I
Characteristics table represents the automatic sleep
mode current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of reset-
ting the device to reading array data. When the RE-
SET# pin is driven low for at least a period of t
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state ma-
chine to reading array data. The operation that was in-
terrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V
draws CMOS standby current (I
at V
be greater.
The RESET# pin may be tied to the system reset cir-
cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up
firmware from the Flash memory.The system may use
the RESET# pin to force the device into the standby
mode. Refer to the “Standby Mode” section for more in-
formation.
Refer to the AC Characteristics tables for RESET# pa-
rameters and to Figure 14 for the timing diagram.
Output Disable Mode
When the OE# input is at V
disabled. The output pins are placed in the high imped-
ance state.
IL
but not within V
SS
±0.3 V, the standby current will
IH
, output from the device is
CC4
SS
). If RESET# is held
±0.3 V, the device
CC5
in the DC
ACC
RP
, the
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