IRLR3410TR International Rectifier Corp., IRLR3410TR Datasheet

IRLR3410TR

Manufacturer Part Number

IRLR3410TR

Description

Manufacturer

International Rectifier Corp.

Datasheets

1.IRLR3410TR.pdf (11 pages)

2.IRLR3410TR.pdf (10 pages)

Specifications of IRLR3410TR

Date_code

08+

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Description

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The D-PAK is designed for surface mounting using

vapor phase, infrared, or wave soldering techniques.

The straight lead version (IRFU series) is for through-

hole mounting applications. Power dissipation levels

up to 1.5 watts are possible in typical surface mount

applications.

dv/dt

STG

@ T

Logic Level Gate Drive

Ultra Low On-Resistance

Surface Mount (IRLR3410)

Straight Lead (IRLU3410)

Advanced Process Technology

Fast Switching

Fully Avalanche Rated

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

Parameter

@ 10V

Typ.

300 (1.6mm from case )

–––

T O -2 52 A A

HEXFET

D -P A K

-55 to + 175

IRLR/U3410

Max.

0.53

± 16

150

9.0

7.9

5.0

T O -25 1 A A

I-P A K

DS(on)

Power MOSFET

Max.

110

1.9

DSS

PD - 91607B

= 17A

= 0.105

= 100V

Units

W/°C

°C/W

V/ns

°C

5/11/98

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