BUK463-60B Philips Semiconductors, BUK463-60B Datasheet

BUK463-60B

Manufacturer Part Number

BUK463-60B

Description

Manufacturer

Philips Semiconductors

Datasheets

1.BUK463-60B.pdf (7 pages)

2.BUK463-60B.pdf (7 pages)

3.BUK463-60B.pdf (7 pages)

Specifications of BUK463-60B

Date_code

08+

Current page: 1 of 7
Download datasheet (74Kb)

Philips Semiconductors

GENERAL DESCRIPTION

N-channel enhancement mode

field-effect power transistor in a

plastic envelope.

The device is intended for use in

Switched Mode Power Supplies

(SMPS), motor control, welding,

DC/DC and AC/DC converters, and

in automotive and general purpose

switching applications.

PINNING - SOT404

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCES

July 1995

PowerMOS transistor

SYMBOL

DGR

tot

stg

th j-mb

th j-a

gate

drain

source

drain

PARAMETER

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

Drain current (pulse peak value)

Total power dissipation

Storage temperature

Junction Temperature

PARAMETER

Thermal resistance junction to

mounting base

Thermal resistance junction to

ambient

DESCRIPTION

QUICK REFERENCE DATA

PIN CONFIGURATION

SYMBOL

tot

DS(ON)

CONDITIONS

minimum footprint,

FR4 board (see Fig. 18).

= 25 ˚C

= 100 ˚C

= 25 ˚C

= 20 k

PARAMETER

Drain-source voltage

Drain current (DC)

Total power dissipation

Junction temperature

Drain-source on-state

resistance

MIN.

- 55

BUK463

SYMBOL

-60A

MAX.

-60A

0.08

175

MAX.

175

TYP.

Product Specification

BUK463-60A/B

-60B

MAX.

-60B

0.10

175

MAX.

2.0

Rev 1.000

UNIT

˚C

K/W

˚C

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